In this work, the geometry effects on the energy band of the well-aligned silicon (Si) nanopillars (NPs) embedded in Si_0.7Ge_0.3 matrix fabricated by neutral beam etching are studied. We formulate and solve the Schrdinger equation with an effective mass approach in k space. The radius, separation, and shape effects on the energy band and density of states of the explored NPs are calculated and discussed. The separation of NPs plays a crucial factor to manipulate the band structure among the aforementioned factors.

中文翻译：

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在中性束刻蚀的Si / Si _0.7 Ge _0.3纳米柱的能带上

在这项工作中，研究了几何形状对嵌入在通过中性束蚀刻制备的Si _0.7 Ge _0.3基质中的取向良好的硅（Si）纳米柱（NP）的能带的影响。我们用k空间中的有效质量方法来公式化和求解Schrdinger方程。计算并讨论了半径，间距和形状对能带和所探测NP态密度的影响。在上述因素中，NP的分离起着至关重要的因素，以操纵能带结构。