Improved sensitivity of over 1 MVW⁻¹, which exceeds that of conventional well-designed Schottky barrier diodes, was achieved in p-GaAs_0.4Sb_0.6/n-InAs nanowire backward diodes (NW BWDs) for low-power microwave energy harvesting at 2.4GHz under zero-bias. The antimony composition in the GaAsSb NWs was increased to 0.6 to form proper interband tunneling of the BWDs. A linear detected characteristic of detection was obtained even when microwave input power was less than 1μW. Furthermore, the reduction of parasitic capacitance due to the adoption of a reduced pad area helped in the improvement of the sensitivity of the NW BWDs. A large dynamic range in detection of low-power microwaves was obtained through the employment of an extended anode structure. Device simulations clarified that carrier depletion in GaAsSb NWs was the main cause of increased forward breakdown voltage, which resulted in the large dynamic range exhibited by the NW BWDs.

在用于低功率微波能量收集的p-GaAs _0.4 Sb _0.6 /n-InAs 纳米线反向二极管 (NW BWD)中实现了超过 1 MVW ^{-1 的}灵敏度提高，超过了传统精心设计的肖特基势垒二极管GHz 零偏压。GaAsSb NW 中的锑成分增加到 0.6，以形成 BWD 的适当带间隧道。即使微波输入功率小于1μ，也能获得线性检测特性W. 此外，由于采用减小的焊盘面积，寄生电容的减小有助于提高 NW BWD 的灵敏度。通过采用扩展的阳极结构，在低功率微波检测中获得了较大的动态范围。器件模拟表明，GaAsSb NW 中的载流子耗尽是正向击穿电压增加的主要原因，这导致 NW BWD 表现出较大的动态范围。