The correlation between current-voltage (I–V) characteristics and threading dislocations was evaluated using p-n junction diodes on a high-quality GaN substrate with an average threading dislocation density (TDD)≤4נ10⁵cm⁻² using the newly developed maskless 3D (M-3D) method. For the forward I–V characteristics, it was found that the “on” resistance (R _on) increased as the number of dislocations in the diode increased. This result indicates that reducing the number of dislocations is effective in improving the forward I–V characteristics. On the other hand, for the reverse I–V characteristics, it was found that there was no clear correlation between the breakdown voltage (V _B) and the number of dislocations. Also, the p-n diode’s destruction point and dislocation position did not match in almost all of the measured p-n diodes. These results suggest that dislocation has very little effect on V _B and the p-n diode destruction.

使用新开发的无掩膜3D技术，在平均穿线位错密度（TDD）≤4 × 10 ⁵ cm ^-2的高质量GaN衬底上，使用pn结二极管评估电流-电压（IV）特性与穿线位错之间的相关性。M-3D）方法。对于正向I–V特性，发现“导通”电阻（R _on）随着二极管中位错数量的增加而增加。该结果表明，减少位错数量可有效改善正向伏安特性。另一方面，对于反向IV 的特性，发现击穿电压（V _B）和位错数之间没有明显的相关性。同样，在几乎所有测得的pn二极管中，pn二极管的破坏点和位错位置都不匹配。这些结果表明，位错对V _B和pn二极管的破坏影响很小。