Field effect mobility was improved in a 4H-SiC (0001) metal-oxide-semiconductor field-effect transistor with Ba diffusion into the gate oxide and NO passivation. The Ba diffusion process caused Ba interface passivation, which suppressed oxide surface roughening. Free carrier mobility and free carrier density were evaluated through Hall effect measurements using the Van der Pauw technique at room temperature. Passivation by Ba or NO was found to have no effect on free carrier mobility but contributed to increased free carrier density. A free carrier ratio of up to 70% was achieved through combined Ba diffusion and NO passivation.

中文翻译：

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Ba扩散工艺和NO钝化提高4H-SiC硅面MOSFET的自由载流子密度

在4H-SiC（0001）金属氧化物半导体场效应晶体管中，Ba扩散到栅氧化物中并进行NO钝化，从而提高了场效应迁移率。Ba扩散过程引起Ba界面钝化，从而抑制了氧化物表面的粗糙化。在室温下使用范德堡技术通过霍尔效应测量来评估自由载流子迁移率和自由载流子密度。发现Ba或NO的钝化对自由载流子迁移率没有影响，但有助于增加自由载流子密度。通过结合Ba扩散和NO钝化，可以实现高达70％的自由载流子比率。