The study of nitrogen-vacancy (NV) centers in diamond are growing attractive in the application of quantum devices. Here, electrical control of NV charge state and defects induced by nitrogen ions implantation in diamond were investigated by transient photocapacitance (TPC) spectroscopy and photoluminescence (PL) spectroscopy. The experiments show that thresholds of 1.2eV appeared in TPC spectra are probably due to the presence of excited defect energy levels related to vacancy or NV center. Alternatively, the 2.2eV defect observed in the TPC spectrum is probably attributed to NV centers. The variation of TPC and PL spectra with different applied voltages suggests that bias voltages control the charge state of NV centers since their effect on the Fermi level shifting in the depletion region. Furthermore, the steady-state photocapacitance indicates that the 2.2eV deep trap slows down the process of photocapacitance rise and fall, and these processes can be enhanced by a higher electrical field.

金刚石中氮空位（NV）中心的研究在量子器件的应用中正变得越来越有吸引力。在这里，通过瞬态光电容（TPC）光谱和光致发光（PL）光谱研究了NV电荷状态的电气控制和由氮离子注入钻石引起的缺陷。实验表明，在TPC光谱中出现1.2eV的阈值可能是由于存在与空位或NV中心有关的激发缺陷能级。或者，在TPC光谱中观察到的2.2eV缺陷可能归因于NV中心。TPC和PL光谱在不同施加电压下的变化表明，偏置电压控制着NV中心的电荷状态，因为它们对耗尽区费米能级移动的影响。此外，