The effect of HfN multi charge trapping layers (CTLs) on the Hf-based metal/oxide/nitride/oxide/Si (MONOS) nonvolatile memory characteristics was investigated to improve the threshold voltage (V _TH) controllability. The Hf-based MONOS structure with HfN_1.3/HfN_1.1/HfN_1.3/HfN_1.1 4-layer CTL realized precise control of flat-band voltage (V _FB) and V _TH compared to the Hf-based MONOS with HfN_1.1 1-layer CTL. The hysteresis width after the program operation was markedly decreased which was originated from the stable trap site formation at the interface of the multi CTL. The retention and fatigue characteristics were found to be remarkably improved for the Hf-based MONOS structure with HfN multi CTL.

研究了HfN多电荷陷阱层（CTL）对基于Hf的金属/氧化物/氮化物/氧化物/ Si（MONOS）非易失性存储特性的影响，以提高阈值电压（V _TH）的可控制性。Hf系MONOS结构的HfN _1.3 / HfN的_1.1 / HfN的_1.3 / HfN的_1.1 4层CTL实现平带电压（精确控制V _FB）和V _TH比Hf基MONOS与HfN的_1.11层CTL。编程操作后的磁滞宽度显着减小，这是由于在多CTL界面处形成稳定的陷阱位点所致。发现具有HfN多CTL的基于Hf的MONOS结构的保留和疲劳特性得到了显着改善。