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Cyclic C4F8 and O2 plasma etching of TiO2 for high-aspect-ratio three-dimensional devices
Japanese Journal of Applied Physics ( IF 1.5 ) Pub Date : 2021-02-13 , DOI: 10.35848/1347-4065/abdf78
Tsubasa Imamura 1, 2 , Itsuko Sakai 1 , Hisataka Hayashi 1 , Makoto Sekine 2 , Masaru Hori 2
Affiliation  

The present study investigates the cyclic etching of TiO2 with CF polymer deposition and removal. We find that C4F8 plasma treatment forms a CF polymer deposition layer on the TiO2 and a modified TiO2 surface under the CF polymer layer. Subsequent O2 plasma treatment removes the CF polymer and the modified layer at the same time. This sequence is repeated. Accordingly, the TiO2 film is etched at a rate of 0.67nm per cycle. The CF polymer and modified TiO2 layer also form on the sidewall TiO2 surface of a trench pattern. We realize the isotropic TiO2 etching of a trench pattern having a high aspect ratio exceeding 40 adopting the cyclic C4F8 and O2 plasma process.



中文翻译:

高纵横比三维器件的TiO 2的循环C 4 F 8和O 2等离子刻蚀

本研究研究了通过CF聚合物沉积和去除TiO 2的循环蚀刻。我们发现,C 4 F 8等离子体处理在TiO 2上形成CF聚合物沉积层,并在CF聚合物层下方形成改性的TiO 2表面。随后的O 2等离子体处理可同时去除CF聚合物和改性层。重复此顺序。因此,以每个周期0.67nm的速率蚀刻TiO 2膜。CF聚合物和改性的TiO 2层也形成在沟槽图案的侧壁TiO 2表面上。我们实现了各向同性的TiO 2采用循环C 4 F 8和O 2等离子工艺蚀刻高深宽比超过40的沟槽图案。

更新日期:2021-02-13
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