A thermal expansion mismatch is inevitable for graphene grown on various substrates by chemical vapor deposition, which leads to the formation of wrinkles during post‐growth cooling. Wrinkles can degrade the superior properties of graphene and increase device‐to‐device inconsistency. To address this issue, wrinkle‐free graphene patterns are grown on Ge(110) substrate with the assistance of 5 × 10¹⁶ cm⁻² Si ion implantation. The experimental data show that the wrinkle‐free graphene can grow on unimplanted areas, whereas no graphene is synthesized on Si ion implanted areas. Further research shows that the wrinkle‐free nature of graphene is closely related to the compressive strain distribution in graphene. The compressive strain in graphene is increased to a significant extent with an increase in the size of graphene patterns. When the compressive strain energy exceeds the wrinkle‐formation barrier, wrinkles emerge on the graphene, and the compressive strain decreases as a consequence. This research may help to understand the formation mechanisms of graphene wrinkles and promote the growth of wrinkle‐free graphene.

中文翻译：

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Ge（110）基底上无皱纹石墨烯图案的制备

对于通过化学气相沉积法在各种基材上生长的石墨烯而言，热膨胀失配是不可避免的，这会导致在生长后冷却过程中形成皱纹。皱纹会降低石墨烯的优越性能，并增加设备之间的不一致。为了解决这个问题，在5×10 ¹⁶  cm ^-2的帮助下，在Ge（110）衬底上生长了无皱纹的石墨烯图案。硅离子注入。实验数据表明，无皱纹的石墨烯可以在未注入的区域生长，而在硅离子注入的区域则没有合成石墨烯。进一步的研究表明，石墨烯的无皱纹性质与石墨烯的压缩应变分布密切相关。随着石墨烯图案尺寸的增加，石墨烯中的压缩应变显着增加。当压缩应变能超过皱纹形成障碍时，石墨烯上会出现皱纹，结果压缩应变会降低。这项研究可能有助于了解石墨烯皱纹的形成机理，并促进无皱纹石墨烯的生长。