Fabrication of n‐Type Doped V‐Shaped Structures on (100) Diamond,Physica Status Solidi (A) - Applications and Materials Science

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Fabrication of n‐Type Doped V‐Shaped Structures on (100) Diamond
Physica Status Solidi (A) - Applications and Materials Science Pub Date : 2021-02-17 , DOI: 10.1002/pssa.202000502
Christoph Schreyvogel ₁ , Solange Temgoua ₂ , Christian Giese ₁ , Volker Cimalla ₁ , Julien Barjon ₂ , Christoph. E. Nebel ₁

Affiliation

Herein, a technological process for the fabrication of n‐type doped V‐shaped structures on (100) single‐crystalline diamond substrates, designed to overcome the limitations of n‐type doping on (100) surfaces, is presented. This doping enhancement process can be applied to realize electronic power devices such as a junction barrier Schottky diode or junction field effect transistors with low on‐resistance. Herein, a catalytic etching process is performed by using square‐shaped nickel masks on the diamond surface and annealing in a hydrogen atmosphere, resulting in the formation of inverted pyramidal structures with flat {111} sidewalls. The resulting V‐shaped structures are subsequently overgrown with phosphorus‐doped diamond to achieve n‐type doped facets with higher doping concentrations. Cathodoluminescence studies reveal the predominant incorporation of phosphorus donors on the {111} sidewalls of V‐shaped structures.

中文翻译：

在（100）金刚石上制造n型掺杂的V型结构

本文介绍了一种在（100）单晶金刚石衬底上制造n型掺杂V型结构的工艺流程，旨在克服（100）表面n型掺杂的局限性。这种掺杂增强工艺可用于实现低导通电阻的电子功率器件，例如结型势垒肖特基二极管或结型场效应晶体管。在此，通过在金刚石表面上使用方形镍掩模并在氢气氛中退火来执行催化蚀刻工艺，从而形成具有平坦{111}侧壁的倒金字塔结构。最终的V形结构会长满磷掺杂的钻石，从而获得掺杂浓度更高的n型掺杂面。

更新日期：2021-04-08

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