The breakdown strength and electron mobility of gallium nitride (GaN) are almost ten and three times higher than those of the silicon devices. Wide band-gap devices have a higher thermal conductivity, higher switching frequency capability, lower on-state resistance and lower power dissipation. Detailed analytical models in the electrical network and channel current variations of these devices during switching intervals are still under investigation. The energy loss and heat dissipation on a power converter can be precisely estimated if the operational modes and the corresponding mathematical models of the device are accurately obtained. Depending on the instantaneous values of the channel current and voltage drops on the components computed from the model, the power dissipation and thermal response can be examined. Prediction of the switching losses of a GaN high electron mobility transistor (HEMT) with a source sense pin can be performed using the instantaneous variation of channel current. In this paper, a detailed analytical model including the stray inductances and parasitic capacitors is derived to obtain the channel current of GaN HEMTs with a source sense pin. The turn-on and turn-off transient energy losses during the switching of a single GaN HEMT device can be computed from the analytical model proposed in this paper using the channel current and drain-source voltage. Results of the derived analytical model, SPICE simulations and experimental work on the DC/DC boost converter are compared.

氮化镓（GaN）的击穿强度和电子迁移率几乎是硅器件的十倍和三倍。宽带隙器件具有更高的热导率，更高的开关频率能力，更低的导通电阻和更低的功耗。这些设备在开关间隔期间的电网和通道电流变化的详细分析模型仍在研究中。如果准确获得设备的工作模式和相应的数学模型，则可以精确估算功率转换器上的能量损耗和散热。根据通过模型计算得出的组件上的通道电流和电压降的瞬时值，可以检查功耗和热响应。可以使用沟道电流的瞬时变化来预测具有源极感测引脚的GaN高电子迁移率晶体管（HEMT）的开关损耗。本文推导了包含杂散电感和寄生电容器的详细分析模型，以通过源极感测引脚获得GaN HEMT的沟道电流。可以根据本文提出的分析模型，使用沟道电流和漏极-源极电压，计算单个GaN HEMT器件开关期间的导通和关断瞬态能量损耗。比较了导出的分析模型，SPICE仿真的结果以及在DC / DC升压转换器上的实验工作。推导了包含杂散电感和寄生电容器的详细分析模型，以获取具有源极检测引脚的GaN HEMT的沟道电流。可以根据本文提出的分析模型，使用沟道电流和漏极-源极电压，计算单个GaN HEMT器件开关期间的导通和关断瞬态能量损耗。比较了导出的分析模型，SPICE仿真的结果以及在DC / DC升压转换器上的实验工作。推导了包含杂散电感和寄生电容器的详细分析模型，以获取具有源极检测引脚的GaN HEMT的沟道电流。可以根据本文提出的分析模型，使用沟道电流和漏极-源极电压，计算单个GaN HEMT器件开关期间的导通和关断瞬态能量损耗。比较了导出的分析模型，SPICE仿真的结果以及在DC / DC升压转换器上的实验工作。可以根据本文提出的分析模型，使用沟道电流和漏极-源极电压，计算单个GaN HEMT器件开关期间的导通和关断瞬态能量损耗。比较了导出的分析模型，SPICE仿真的结果以及在DC / DC升压转换器上的实验工作。可以根据本文提出的分析模型，使用沟道电流和漏极-源极电压，计算单个GaN HEMT器件开关期间的导通和关断瞬态能量损耗。比较了导出的分析模型，SPICE仿真的结果以及在DC / DC升压转换器上的实验工作。