当前位置: X-MOL 学术Analog Integr. Circ. Signal Process. › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
Concurrent design of Schottky diode limiter and LNA
Analog Integrated Circuits and Signal Processing ( IF 1.2 ) Pub Date : 2021-02-17 , DOI: 10.1007/s10470-021-01804-3
Seyed Hossein Alavi Lavasani , Ali Medi

In this paper concurrent design of Schottky diode based limiter and low noise amplifier (LNA), based on noise matching, is investigated to achieve minimum noise figure (NF) of the receiver chain. In design procedure of the LNA, the noise figure is minimum, gain at central frequency is 14.5 dB, and limiter structure tolerates up to 5 W continuous wave input power. In the proposed concurrent design, a pass-band filter is applied at the LNA output to attenuate undesired out-of-band signals. In the proposed design, the limiter-LNA is implemented with a 0.25 µm gate length AlGaAs/InGaAs pHEMT process. Measured noise figure of chain is 2.7 dB and average gain over 8.5–9.5 GHz frequency range and the gain at 9 GHz center frequency are 10 dB and 14.5 dB respectively. The performance results of proposed matching network are compared with traditional 50 Ω matching networks in limiter-LNA with identical circuit specifications.



中文翻译:

肖特基二极管限幅器和LNA的并发设计

本文研究了基于噪声匹配的基于肖特基二极管的限幅器和低噪声放大器(LNA)的并行设计,以实现接收器链的最小噪声系数(NF)。在LNA的设计过程中,噪声系数最小,中心频率处的增益为14.5 dB,而限幅器结构可承受高达5 W的连续波输入功率。在提出的并行设计中,在LNA输出处应用通带滤波器以衰减不希望的带外信号。在提出的设计中,限幅器-LNA采用0.25 µm栅极长度的AlGaAs / InGaAs pHEMT工艺实现。测得的链噪声系数为2.7 dB,在8.5–9.5 GHz频率范围内的平均增益为9 GHz,中心频率处的增益分别为10 dB和14.5 dB。

更新日期:2021-02-17
down
wechat
bug