Silicon-on-insulator (SOI) wafers are used in many micro-electromechanical system (MEMS) devices because of their stable mechanical properties. However, one of the disadvantages of using the SOI configuration is residual stress deformation; strong residual stresses in the buried-oxide layer deform the device and deteriorate its performance. This could prevent the development of high-precision sensors and actuators. In recent years, a new deformation mode caused by this residual stress has been reported, involving tilting of the suspended MEMS structure owing to local deformation of the anchor. However, methods to solve this problem have not yet been proposed. In this study, we propose a simple T-shaped support as a solution to the tilt deformation. We verified its effects by finite element analysis and experiments; the proposed structure was observed to successfully reduce the tip displacement of a SOI-based cantilever by one-fourth. In addition, we applied the proposed method to a parallel-plate accelerometer as a demonstration to confirm that the sensitivity variations of the device reduced from 10.8% to 6.8% using the proposed support structure. Thus, we believe that the proposed design can contribute to the development of extremely accurate MEMS sensors and optical devices.

绝缘体上硅（SOI）晶片由于其稳定的机械性能而被用于许多微机电系统（MEMS）器件中。但是，使用SOI配置的缺点之一是残余应力变形。掩埋氧化物层中的强大残余应力会使器件变形并降低其性能。这可能会阻止高精度传感器和执行器的开发。近年来，已经报道了由该残余应力引起的新的变形模式，该变形模式包括由于锚的局部变形而导致的悬浮的MEMS结构的倾斜。但是，尚未提出解决该问题的方法。在这项研究中，我们提出了一种简单的T形支撑作为倾斜变形的解决方案。我们通过有限元分析和实验验证了其效果；观察到所提出的结构成功地将基于SOI的悬臂的尖端位移减小了四分之一。此外，我们将所建议的方法应用于平行板加速度计作为演示，以确认使用所建议的支撑结构，设备的灵敏度变化从10.8％降低至6.8％。因此，我们相信所提出的设计可以为开发极其精确的MEMS传感器和光学设备做出贡献。