The related recovery mymargin mymargin effect of hydrogen on AlGaN/gallium nitride (GaN) high-electron-mobility transistors (HEMTs) irradiated by high-fluence protons was investigated in this article. The results show that under the same temperature and time conditions, the recovery effect induced by thermal hydrogen annealing is better than that of ordinary thermal annealing. Compared with the ordinary thermal annealing, the high-fluence proton-irradiated device experienced a 65-mA additional increase in saturation current at the gate-to-source voltage ( $V_{\mathrm {gs}}$ ) of 0 V, a 0.074-V additional negative shift of the threshold voltage, a more significant increase in reverse gate leakage current and better gate lag after the hydrogen treatment. The defect densities are extracted by the low-frequency noise method. It shows that the trap density decreases from $8.32\times 10^{17}$ to $6.84\times 10^{\mathrm {17 {}}}$ cm $^{-3}\cdot $ eV $^{-1}$ after ordinary thermal annealing and then decreases from $6.84\times 10^{17}$ to $3.85\times 10^{17}$ cm $^{-3}\cdot $ eV $^{-1}$ after hydrogen treatment of an irradiated AlGaN/GaN HEMT. The mechanism for the decrease of trap density after the hydrogen treatment could be attributed to the H-passivated defects in the structures of AlGaN/GaN HEMTs.

中文翻译：

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高能质子辐照的AlGaN / GaN高电子迁移率晶体管的氢相关恢复效应

本文研究了氢对高通量质子辐照的AlGaN /氮化镓（GaN）高电子迁移率晶体管（HEMT）的相关回收效应的影响。结果表明，在相同的温度和时间条件下，热氢退火引起的恢复效果要优于普通热退火。与普通的热退火相比，高通量质子辐照的器件在栅极到源极的电压下饱和电流增加了65mA（ $ V _ {\ mathrm {gs}} $ 电压为0 V时，阈值电压又产生了0.074 V的负移，反向栅极漏电流的增加更为显着，并且经过氢处理后栅极滞后效果更好。缺陷密度通过低频噪声法提取。这表明陷阱密度从 $ 8.32 \次10 ^ {17} $ 到 $ 6.84 \ times 10 ^ {\ mathrm {17 {}}} $ 厘米 $ ^ {-3} \ cdot $ 电子伏特 $ ^ {-1} $ 经过普通的热退火，然后从 $ 6.84 \次10 ^ {17} $ 到 $ 3.85 \ times 10 ^ {17} $ 厘米 $ ^ {-3} \ cdot $ 电子伏特 $ ^ {-1} $ 在对辐照过的AlGaN / GaN HEMT进行氢处理后。氢处理后陷阱密度降低的机理可能归因于AlGaN / GaN HEMTs结构中的H钝化缺陷。