A nonvolatile silicon photonic switch constructed by a hybrid integration of a back-gate flash-memory unit with a silicon waveguide is proposed. It can persistently maintain the switching state without continuous supplies due to the memory function of the flash unit, which makes it attractive to reduce the static power consumption. The single-gate control configuration is replaced by dual electrodes (back-gate and drain electrodes) to break the symmetrical electric field and ensure the success of the programming/erasing process. Additionally, a monolayer graphene is utilized instead of polysilicon as the floating gate of flash unit to alleviate the bandwidth-extinction ratio restriction with low insertion loss. Depending on appropriate voltage stimulus, the device either acts as an intensity switch or a phase switch. 26.7μm length is able to achieve 20dB extinction ratio, 1.4dB insertion loss and almost no phase change in a non-resonant configuration, which allows truly broadband performance; while a π-shift is achieved by 30μm length with 31dB/1.65dB extinction ratio/insertion loss incorporating into arms of a Mach-Zehnder interferometer.

中文翻译：

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具有基于石墨烯的闪存单元的非易失性硅光子开关

提出了一种通过将背栅闪存单元与硅波导混合集成而构成的非易失性硅光子开关。由于闪光灯单元的存储功能，它可以连续地保持开关状态而无需连续供电，这使其具有降低静态功耗的吸引力。单栅极控制配置被双电极（后栅极和漏极）取代，以打破对称电场并确保编程/擦除过程成功。另外，利用单层石墨烯代替多晶硅作为闪光单元的浮动栅极，以减轻带宽消光比的限制并具有低的插入损耗。根据适当的电压激励，该设备可以用作强度开关或相位开关。26。7μm的长度能够实现20dB的消光比，1.4dB的插入损耗，并且在非谐振配置中几乎没有相位变化，从而实现了真正的宽带性能；而一个π位移以30μm的长度实现，消光比/插入损耗为31dB / 1.65dB，并结合到Mach-Zehnder干涉仪的支臂中。