Single‐ended half‐select disturb‐free 11T static random access memory cell for reliable and low power applications,International Journal of Circuit Theory and Applications

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Single‐ended half‐select disturb‐free 11T static random access memory cell for reliable and low power applications
International Journal of Circuit Theory and Applications ( IF 1.8 ) Pub Date : 2021-02-15 , DOI: 10.1002/cta.2954
Erfan Abbasian ₁ , Morteza Gholipour ₁

Affiliation

This paper presents an 11 transistor (SEHF11T) static random access memory (SRAM) cell with high read static noise margin (RSNM) and write static noise margin (WSNM). It eliminates the write half‐select disturb using cross‐point data‐aware write word lines, which can mitigate bit‐interleaving structure to reduce multiple‐bit upset and increase soft‐error immunity. We evaluated and analyzed the effect of process, voltage, and temperature (PVT) variations on various design metrics and compared it with other cells. The SEHF11T performs fast read operation due to its higher read current and slow write operation due to its single‐ended nature. It employs the read decoupling technique to enhance the RSNM. The stacked transistors in the left/right half‐cell increase the RSNM. In addition, the WSNM is improved by eliminating the feedback of cross‐coupled inverters pair during write operation by means of power‐cutoff write‐assist technique. The proposed cell shows 1.11X higher RSNM and 1.37X higher WSNM compared to fully differential 8T (FD8T) cell. The stacked transistors in the cell reduce leakage power dissipation. The SEHF11T consumes 0.47X lower leakage power compared to FD8T at V_DD = 0.7 V. Furthermore, it exhibits high reliability against PVT variations in subthreshold region and shows 1.09X narrower spread in leakage power than that of FD8T at V_DD = 0.3 V.

中文翻译：

单端半选择无干扰11T静态随机存取存储单元，可实现可靠的低功耗应用

本文介绍了一种具有高读取静态噪声容限（RSNM）和写入静态噪声容限（WSNM）的11晶体管（SEHF11T）静态随机存取存储器（SRAM）单元。它使用交叉点数据感知的写字线消除了写半选择干扰，可以减轻位交织结构，从而减少多位干扰并提高软错误抗扰性。我们评估并分析了工艺，电压和温度（PVT）变化对各种设计指标的影响，并将其与其他单元进行了比较。SEHF11T由于其较高的读取电流而执行快速读取操作，而由于其单端性质而使其执行较慢的写入操作。它采用读解耦技术来增强RSNM。左右半单元中的堆叠晶体管增加了RSNM。此外，通过使用功率切断写辅助技术消除写操作期间交叉耦合的反相器对的反馈，从而改善了WSNM。与全差分8T（FD8T）单元相比，建议的单元显示更高的RSNM 1.11倍和WSNM 1.37倍。单元中的堆叠晶体管减少了泄漏功率耗散。与FD8T相比，SEHF11T在以下条件下消耗的泄漏功率低0.47倍V _DD = 0.7V。此外，在V _DD = 0.3 V时，它对亚阈值区域内的PVT变化表现出很高的可靠性，并且泄漏功率的散布比FD8T小1.09倍。

更新日期：2021-04-08

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