We present an intensity-balanced dual-frequency laser (DFL) based on an Nd: GdVO4 microchip crystal. The intensity balance ratio tuning mechanism of the DFL, which is governed by the heat sink temperature Tc of the laser crystal, is experimentally studied. The experimental results indicate that keeping a balanced intensity condition, when the pumping power of the DFL increases, the heat sink temperature Tc of the laser crystal must be lowered to rebalance the DFL signal intensities. The Tc versus pumping power slope is experimentally measured to be −17.95 ° C / W. By fixing the pumping power at 5.6 W, an intensity-balanced microchip DFL with output power up to 103 mW and frequency separation up to 61 GHz is achieved, whose slope efficiency is 9%.

中文翻译：

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强度平衡双频Nd：GdVO ₄芯片激光器的实验研究

我们提出了一种基于Nd：GdVO4微芯片晶体的强度平衡双频激光器（DFL）。实验研究了DFL的强度平衡比调整机制，该机制受激光晶体的散热温度Tc控制。实验结果表明，在保持平衡强度的条件下，当DFL的泵浦功率增加时，必须降低激光晶体的散热器温度Tc才能重新平衡DFL信号强度。Tc与泵浦功率的斜率在实验上测得为−17.95°C /W。通过将泵浦功率固定在5.6 W，可以实现强度平衡的微芯片DFL，其输出功率高达103 mW，频率分离度高达61 GHz，斜率效率为9％。