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High power density inverter utilizing SiC MOSFET and interstitial via hole PCB for motor drive system
Electrical Engineering in Japan ( IF 0.4 ) Pub Date : 2021-02-14 , DOI: 10.1002/eej.23323
Ikuya Sato 1 , Takaaki Tanaka 1 , Motohito Hori 1 , Ryuuji Yamada 1 , Akio Toba 1 , Hisao Kubota 2
Affiliation  

This paper proposes a high power density inverter utilizing SiC metal‐oxide‐semiconductor field‐effect transistor (MOSFET) modules and an interstitial via hole (IVH) printed circuit board (PCB) for a motor drive system. The inverter also includes a power circuit, heatsink, cooling fan, gate drive circuit, and DC capacitors. The output power density of the proposed inverter is 81 kW/L. The inverter outputs 37 kW for motor drive applications. To achieve this superior output power density, this paper explains a prototype SiC MOSFET module without an antiparallel schottky barrier diode, and a unique multilayer laminate IVH PCB to connect the modules and DC capacitors. This paper describes the experimental results to verify the motor drive performance and the increase in temperature under the rated load operation.

中文翻译:

利用SiC MOSFET和间隙通孔PCB的高功率密度逆变器用于电机驱动系统

本文提出了一种高功率密度逆变器,该逆变器利用SiC金属氧化物半导体场效应晶体管(MOSFET)模块和间隙驱动孔(IVH)印刷电路板(PCB)来驱动电机驱动系统。逆变器还包括电源电路,散热器,冷却风扇,栅极驱动电路和直流电容器。拟议的逆变器的输出功率密度为81 kW / L。逆变器输出功率为37 kW,用于电机驱动应用。为了实现这种出色的输出功率密度,本文介绍了没有反并联肖特基势垒二极管的原型SiC MOSFET模块,以及用于连接模块和DC电容器的独特多层层压IVH PCB。本文介绍了实验结果,以验证电机驱动性能和额定负载操作下的温度升高。
更新日期:2021-02-14
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