Porous GaAs were formed by electrochemical etching of n-type GaAs (1 0 0) substrates implanted by iron ion beam with energy of 2 MeV at low ion fluence of 7.8 × 10⁺¹³ Fe⁺⁺/cm². The influence of the implantation on morphological and structural properties of the formed porous GaAs was investigated using scanning electron microscopy (SEM), energy dispersive x-ray spectroscopy (EDS), X-ray diffraction (XRD), X-ray photoelectron spectroscopic (XPS) and micro-Raman scattering. It is shown that the implantation process leads to significant modifications in both the morphological aspects and the chemical constitution of the formed porous GaAs layer. XRD, Raman and XPS results revels that the porous layer formed on the un-implanted substrate has a Ga-oxide rich surface, while the one formed on the implanted substrate is highly passivated with As-oxide.

通过以7.8×10 ⁺¹³ Fe ⁺⁺ / cm ^2的低离子通量对铁离子束注入2 MeV能量的铁离子束注入的n型GaAs（1  0  0）基板进行电化学蚀刻，形成多孔GaAs。。使用扫描电子显微镜（SEM），能量色散X射线光谱（EDS），X射线衍射（XRD），X射线光电子能谱（XPS）研究了注入对所形成的多孔GaAs的形态和结构性质的影响）和微拉曼散射。结果表明，注入工艺在所形成的多孔GaAs层的形态和化学组成方面都产生了重大变化。XRD，Raman和XPS结果表明，在未注入的衬底上形成的多孔层具有富含Ga的表面，而在注入的衬底上形成的层则被As氧化物高度钝化了。