The flexible Ag/TiO₂/ITO/PET resistive switching memory is prepared by low-temperature sol-gel method with UV irradiation, and the simple method that combined the advantages of sol-gel method and low temperature can be applied to fabricate high-quality film. The flexible Ag/TiO₂/ITO/PET memory device displays good resistive behavior, for instance, the narrow distributions of switching voltages, good cycle endurance, and long retention time. Meanwhile, the multilevel resistance states of the device can be realized by controlling the compliance current or reset voltages, showing the potential of applications in neural networks and high-density storge. In addition, flexibility of the Ag/TiO₂/ITO/PET is studied, which exhibit good endurance and retention properties under bending condition. The I–V curves are replotted and fitted for analyzing the conductive mechanism of the device. The fitting results show that SCLC and Ohmic mechanism are main mechanisms of high resistance state and low resistance state respectively. The electrochemical and thermochemical modes are adopted to explain resistive switching behavior. Our results indicate the Ag/TiO₂/ITO/PET memory has potential application in wearable and foldable electronics.

采用低温溶胶-凝胶法和紫外线照射制备了柔性的Ag / TiO ₂ / ITO / PET电阻开关存储器，可以将溶胶-凝胶法与低温的优点相结合的简单方法用于制备高电阻率的存储器。优质电影。柔性的Ag / TiO ₂ / ITO / PET存储器具有良好的电阻性能，例如，开关电压分布窄，循环寿命长，保留时间长。同时，可以通过控制顺应电流或复位电压来实现器件的多级电阻状态，从而显示出在神经网络和高密度存储中的应用潜力。另外，Ag / TiO _2的柔韧性/ ITO / PET被研究，在弯曲条件下具有良好的耐久性和保持性能。重新绘制了I–V曲线，并拟合了该曲线以分析设备的导电机理。拟合结果表明，SCLC和欧姆机理分别是高阻态和低阻态的主要机理。采用电化学和热化学模式来解释电阻切换行为。我们的结果表明，Ag / TiO ₂ / ITO / PET存储器在可穿戴和可折叠电子产品中具有潜在的应用。