Temperature-insensitive properties are attractive for most electronics, including polymeric semiconducting devices. Especially, polymeric field-effect transistors (FETs) with high mobility have been important research targets due to their broad applications. However, polymeric FETs with stable charge transport operating at extremely cold or hot zones are faced with enormous challenges. In this study, the polyacrylonitrile was found to significantly tune the sizes of pre-aggregates of polymers in solutions and the crystallinity of the polymeric films. The orientation of 5–25 μm linear grains in the films were prepared through the bar-coating process with polyacrylonitrile as an additive, which stabilized the electron mobility over a wide range of temperatures. The linear-grain morphology of the film contributed to reducing the holes and grain boundaries in the transport paths of carriers. Typically, the top-gate FETs based on P(NDI2OD-T2) displayed a stable electron transporting behavior from 200 to 460 K, with mobility greater than 3.5 cm²V⁻¹s⁻¹.

对温度不敏感的特性对大多数电子设备（包括聚合物半导体器件）具有吸引力。特别地，由于其广泛的应用，具有高迁移率的聚合物场效应晶体管（FET）已成为重要的研究目标。然而，在极冷或极热区域中具有稳定电荷传输的聚合物FET面临着巨大的挑战。在这项研究中，发现聚丙烯腈可显着调节溶液中聚合物预聚集体的大小和聚合物膜的结晶度。薄膜中5–25μm线性晶粒的取向是通过采用聚丙烯腈作为添加剂的棒涂工艺制备的，该取向可以在很宽的温度范围内稳定电子迁移率。薄膜的线性晶粒形态有助于减少载流子传输路径中的空穴和晶界。通常，基于P（NDI2OD-T2）的顶栅FET在200至460 K范围内表现出稳定的电子传输行为，迁移率大于3.5 cm² V ^-1 s ^-1。