A broadband process, voltage, and temperature (PVT)-insensitive noise-canceling balun-low-noise amplifier (LNA) was implemented in the 0.13- $\mu \text{m}$ CMOS process for subgigahertz wireless communication applications. The proposed LNA is based on the traditional common-gate common-source (CGCS) balun-LNA topology, and it adopts the diode-connected loads to reduce the noise contribution originated from CGCS transistors and enhance the linearity due to post linearization. The auxiliary common-source (CS) amplifier with a diode-connected is added to reduce the overall noise figure (NF) of the LNA by sharing an input signal with CGCS transistors and applying its output signal to the diode-connected load of CS transistor. Because the voltage gain of the LNA is determined by the transconductance ( $g_{m}$ ) ratio of the same types of nMOS transistors, its power gain ( $S_{21}$ ) and NF are quite roust over PVT variations. In experiments, it showed $S_{21}$ of 14 dB and NF of 4 dB with an input return loss ( $S_{11}$ ) of greater than 10 dB at 450 MHz. Concerning voltage variation (1.08–1.32 V) and temperature variation ( $- 20\,\,^{\circ }\text {C} \sim +80 \,\,^{\circ }\text{C}$ ), the worst variations in $S_{21}$ and NF were approximately 1.4 and 1.1 dB, respectively.

中文翻译：

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亚兆赫兹无线通信应用的宽带PVT不敏感的全nMOS降噪Balun-LNA

0.13中实现了宽带工艺，电压和温度（PVT）不敏感的降噪巴伦低噪声放大器（LNA）。 $ \ mu \ text {m} $ 兆赫兹无线通信应用的CMOS工艺。拟议的LNA基于传统的共栅共源（CGCS）平衡-LNA拓扑，并采用二极管负载，以减少CGCS晶体管产生的噪声贡献，并增强后线性化带来的线性度。通过与CGCS晶体管共享输入信号并将其输出信号施加到CS晶体管的二极管连接的负载，添加了二极管连接的辅助共源（CS）放大器，以降低LNA的总体噪声系数（NF）。 。由于LNA的电压增益取决于跨导（ $ g_ {m} $ ）相同类型的nMOS晶体管的比率，其功率增益（ $ S_ {21} $ ）和NF对PVT变化的影响很大。在实验中，它表明 $ S_ {21} $ 输入损耗为14 dB，NF为4 dB（ $ S_ {11} $ ）在450 MHz时大于10 dB。关于电压变化（1.08–1.32 V）和温度变化（ $-20 \，\，^ {\ circ} \ text {C} \ sim +80 \，\，^ {\ circ} \ text {C} $ ），最差的变化 $ S_ {21} $ 和NF分别约为1.4和1.1 dB。