A variable gain distributed amplifier (VGDA) for the Rx path of ultrawideband phased-array system is implemented in 90-nm CMOS process and presented in this letter. In order to achieve high gain and wideband with relative low dc power dissipation ( $P_{\mathrm {dc}}$ ), the combination of the conventional distributed amplifier (CDA) and the cascaded single-stage distributed amplifier (CSSDA) is utilized to the circuit. Moreover, the active variable termination resistor (AVTR) is adopted to adjust the flatness of gain. According to the experimental results, the proposed VGDA achieves a 21-dB peak gain with a 40-GHz 3-dB bandwidth (3.7–43.7 GHz), 18-dB gain control range (GCR), and 16° maximum phase variation.

中文翻译：

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90nm CMOS中的3.7–43.7 GHz低功耗可变增益分配放大器

本信介绍了用于超宽带相控阵系统Rx路径的可变增益分布式放大器（VGDA），它采用90nm CMOS工艺实现。为了以相对较低的直流功耗实现高增益和宽带（ $ P _ {\ mathrm {dc}} $ ），传统的分布式放大器（CDA）和级联的单级分布式放大器（CSSDA）的组合用于电路。此外，采用有源可变终端电阻（AVTR）来调节增益的平坦度。根据实验结果，拟议的VGDA在40 GHz 3-dB带宽（3.7–43.7 GHz），18 dB增益控制范围（GCR）和16°最大相位变化的情况下实现了21 dB的峰值增益。