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Millimeter-Wave BiCMOS Backscatter Modulator for 5 G-IoT Applications
IEEE Microwave and Wireless Components Letters ( IF 2.9 ) Pub Date : 2020-12-16 , DOI: 10.1109/lmwc.2020.3042709
Diogo Matos 1 , Marina Daniela da Cruz Jordao 1 , Ricardo Correia 1 , Nuno Borges Carvalho 2
Affiliation  

In this letter, the authors present the first millimeter-wave (mm-wave) high-order backscatter modulator, based on a BiCMOS technology for 5G/Internet of Things (IoT) applications. The design and implementation of the proposed system are described, followed by the considered characterization measurement setup. This work presents a chip that performs different orders of backscatter modulation, M-quadratic-amplitude modulation (QAM), for a wide range of operation both in frequency (20–28 GHz) as well as with multiple values of input power. Besides that, the modulator presents the lowest power consumption compared with the state of the art. An extensive estimation of error vector magnitude (EVM) values for different frequencies and modulations (16, 32, and 64-QAM) is presented. These results show that it will be possible, in a future implementation, to establish low power consumption communication links with a multigigabit data rate in a wide range of frequencies.

中文翻译:

适用于5 G-IoT应用的毫米波BiCMOS背向散射调制器

在这封信中,作者介绍了首个基于BiCMOS技术的毫米波(mm-wave)高阶反向散射调制器,该调制器适用于5G /物联网(IoT)应用。描述了所提出系统的设计和实现,然后介绍了所考虑的特性测量设置。这项工作提出了一种芯片,该芯片可以执行不同阶数的反向散射调制,M二次振幅调制(QAM),以在频率(20–28 GHz)以​​及多种输入功率值下进行广泛的工作。除此之外,与现有技术相比,调制器的功耗最低。给出了针对不同频率和调制(16、32和64-QAM)的误差矢量幅度(EVM)值的广泛估计。这些结果表明,在将来的实施中,
更新日期:2021-02-12
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