As a multigate device, the multiple-state electrostatically formed nanowire transistor (MSET) exhibits a rather complex characteristic on account of the coupling between each of its two adjacent terminals. The MSET has shown promise across a steadily growing range of applications and integrated circuit components. However, an analytical model of the MSET has not been formulated. The objective of this work was to develop practical DC and transient models of the MSET. The modeling approach comprises two stages: the first stage consists of a bottom-up derivation of the I–V characteristics from the fundamental physical level using the physical processes within the device to derive equations that describe its steady-state behavior; the second stage proposes a set of analytical equations more applicable to simulation environments. A transient model that considers device parasitic capacitance is also established. The models are validated against robust model simulations in TCAD Sentaurus and Cadence Virtuoso.

中文翻译：

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MSET 器件的直流和瞬态模型

作为多栅极器件，多态静电形成纳米线晶体管（MSET）由于其两个相邻端子之间的耦合而表现出相当复杂的特性。MSET 已在稳步增长的应用和集成电路组件范围内显示出前景。然而，尚未制定 MSET 的分析模型。这项工作的目标是开发 MSET 的实用直流和瞬态模型。建模方法包括两个阶段：第一阶段包括使用设备内的物理过程从基本物理层自下而上推导 I-V 特性，以推导出描述其稳态行为的方程；第二阶段提出了一组更适用于模拟环境的分析方程。还建立了考虑器件寄生电容的瞬态模型。这些模型已经过 TCAD Sentaurus 和 Cadence Virtuoso 中强大的模型模拟验证。