In this paper, a dielectric modulated double source trench gate tunnel FET (DM-DSTGTFET) based on biosensor is proposed for the detection of biomolecules. DM-DSTGTFET adopts double source and trench gate to enhance the on-state current and to generate bidirectional current. In the proposed structure, two cavities are etched over 1 nm gate oxide for biomolecules filling. A 2D simulation in the Technology Computer-Aided Design (TCAD) is adopted for the analysis of sensitivity study. The results show that under low supply voltage, the current sensitivity of the DM-DSTGTFET is as high as 1.38 × 10⁵, and the threshold voltage sensitivity can reach 1.2 V. Therefore, the DM-DSTGTFET biosensor has good application prospects due to its low power consumption and high sensitivity.

本文提出了一种基于生物传感器的介电调制双源沟槽栅隧道FET（DM-DSTGTFET），用于生物分子的检测。DM-DSTGTFET采用双源极和沟槽栅极，以提高导通电流并产生双向电流。在提出的结构中，在1 nm的栅氧化层上刻蚀两个腔体，以填充生物分子。敏感性研究的分析采用了技术计算机辅助设计（TCAD）中的2D模拟。结果表明，在低电源电压下，DM-DSTGTFET的电流灵敏度高达1.38×10 ⁵，阈值电压灵敏度可达到1.2V。因此，DM-DSTGTFET生物传感器具有良好的应用前景。低功耗和高灵敏度。