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Si grating structure for surface plasmon resonance excitation by back-side normal incidence illumination
Applied Physics Express ( IF 2.3 ) Pub Date : 2021-02-11 , DOI: 10.35848/1882-0786/abe084
Yoshiki Saito , Shinichi Suzuki , Tetsuo Kan

We propose a structure suitable for surface plasmon resonance (SPR) excitation with light incident on the back-side of the device, which has affinity with the semiconductor process. We constructed a diffraction grating on the top layer of a silicon-on-insulator wafer and completely embedded the grating in a polymer. According to a reflectance measurement, SPR could be efficiently excited, and its behavior presented consistency with the calculations. Since this structure is semiconductor fabrication based and allows elimination of both the prism and the light receiver commonly used in SPR experiments, it will contribute to realization of a thin one-chip SPR device.



中文翻译:

通过背面法向入射照明的表面等离子体激元共振激发的硅光栅结构

我们提出一种适合表面等离子体激元谐振(SPR)激发的结构,该结构具有入射到设备背面的光,该光与半导体工艺具有亲和力。我们在绝缘体上硅晶圆的顶层上构建了一个衍射光栅,并将该光栅完全嵌入聚合物中。根据反射率测量,可以有效地激发SPR,并且其行为与计算结果一致。由于这种结构是基于半导体制造的,并且可以消除SPR实验中常用的棱镜和光接收器,因此它将有助于实现薄型单芯片SPR器件。

更新日期:2021-02-11
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