B/N-Enriched Semi-Conductive Polymer Film for Micro-Supercapacitors with AC Line-Filtering Performance,Langmuir

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B/N-Enriched Semi-Conductive Polymer Film for Micro-Supercapacitors with AC Line-Filtering Performance
Langmuir ( IF 3.7 ) Pub Date : 2021-02-11 , DOI: 10.1021/acs.langmuir.0c03635
Zhenying Chen _{1,

2} , Yuanhai Chen ₃ , Yazhen Zhao ₁ , Feng Qiu ₃ , Kaiyue Jiang ₁ , Senhe Huang ₁ , Changchun Ke ₄ , Jinhui Zhu ₁ , Diana Tranca ₁ , Xiaodong Zhuang ₁

Affiliation

Microsupercapacitors (MSCs) have drawn great attention for use as miniaturized electrochemical energy storage devices in portable, wearable, as well as implantable electronics. Many materials have been developed as electrodes for MSCs. However, the thin-film fabrication for most of these materials involves multistep operations, including filtration, spray coating, and sputtering. Most importantly, these methods present challenges for the preparation of thin films at the atomic or molecular scale. Therefore, the understanding of performance of ultrathin-film-based MSCs remains challenge. Herein, a B/N-enriched polymer film is successfully prepared using the photoassisted interfacial approach. The as-synthesized polymer film exhibits typical semiconductive characteristics and can be easily scaled up to a large area of up to tens of square centimeters. This ultrathin polymer film can be directly transferred to silicon wafers to fabricate MSC through laser scribing. The prepared MSC exhibits specific volumetric capacitance as high as 20.9 F cm^–3, corresponding to volumetric energy density of 2.9 mWh cm^–3 (at 0.1 V s^–1). Moreover, the volumetric power density can reach 1461 W cm^–3, surpassing most existing semiconductive polymer film-based MSC devices. In addition, the prepared MSC exhibits typical AC line-filtering ability (−67° at 120 Hz). This study offers a facile interfacial approach to preparing semiconductive polymer films with aromatic moieties for microsized energy storage devices.

中文翻译：

具有交流线过滤性能的，用于微型超级电容器的富含B / N的半导电聚合物膜

微型超级电容器（MSC）在便携式，可穿戴以及可植入电子设备中用作微型化电化学储能设备已引起极大关注。已经开发出许多材料作为MSC的电极。但是，大多数这些材料的薄膜制造都涉及多步骤操作，包括过滤，喷涂和溅射。最重要的是，这些方法对于以原子或分子规模制备薄膜提出了挑战。因此，对基于超薄膜的MSC的性能的理解仍然是挑战。在此，使用光辅助界面方法成功地制备了富含B / N的聚合物膜。刚合成的聚合物膜表现出典型的半导体特性，可以很容易地按比例放大到数十平方厘米的大面积。这种超薄聚合物膜可以直接转移到硅片上，通过激光划刻来制造MSC。制备的MSC表现出高达20.9 F cm的比容^–3，对应于2.9 mWh cm ^–3的体积能量密度（在0.1 V s ^–1时）。此外，体积功率密度可以达到1461 W cm ^–3，超过了大多数现有的基于半导体聚合物薄膜的MSC器件。此外，制备的MSC具有典型的交流线路过滤能力（120 Hz时为-67°）。这项研究提供了一种简便的界面方法来制备具有芳香族部分的半导体聚合物薄膜，用于微型储能设备。

更新日期：2021-02-23

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