In this paper, an improved analytical model involving nanoscale materials parameters for predicting threshold voltage of GaN HEMT is proposed. The proposed model for the first time incorporates the effect of structural miniaturization on nanoscale parameters such as bandgap, melting temperature, permittivity and polarization on the threshold voltage. The proposed model is derived, maintaining the charge neutrality across the device. Additionally, the effect of strain relaxation on threshold voltage due to higher Al mole concentration is included in the model. The surface barrier height is also evaluated as a considering both Al mole concentration and AlGaN barrier layer thickness. The developed model is verified for various topologies of HEMT exhibiting tunability and demonstrating excellent agreement between evaluated values and extracted values from the experimental data.

本文提出了一种改进的包含纳米材料参数的分析模型，用于预测GaN HEMT的阈值电压。首次提出的模型结合了结构微型化对纳米级参数（如带隙，熔化温度，介电常数和极化）的影响，对阈值电压产生了影响。推导提出的模型，在整个设备上保持电荷中性。另外，由于较高的Al摩尔浓度，应变松弛对阈值电压的影响也包括在模型中。还考虑了Al摩尔浓度和AlGaN势垒层厚度来评估表​​面势垒高度。