In this work, we proposed an accurate analytical model for the estimation of the channel maximum temperature of Ga₂O₃ MOSFETs with native or high-thermal-conductivity substrates. The thermal conductivity of Ga₂O₃ is anisotropic and decreases significantly with increasing temperature, which both are important for the thermal behavior of Ga₂O₃ MOSFETs and thus considered in the model. Numerical simulations are performed via COMSOL Multiphysics to investigate the dependence of channel maximum temperature on power density by varying device geometric parameters and ambient temperature, which shows good agreements with analytical model, providing the validity of this model. The new model is instructive in effective thermal management of Ga₂O₃ MOSFETs.

在这项工作中，我们提出了一个精确的分析模型，用于估计使用天然或高导热衬底的Ga ₂ O ₃ MOSFET的沟道最高温度。Ga ₂ O ₃的热导率是各向异性的，并且随着温度的升高而显着降低，这两者对于Ga ₂ O ₃的热行为都很重要。因此在模型中考虑了MOSFET。通过COMSOL Multiphysics进行数值模拟，通过改变器件的几何参数和环境温度来研究通道最高温度对功率密度的依赖性，这与分析模型显示出良好的一致性，从而提供了该模型的有效性。新模型对Ga ₂ O ₃ MOSFET的有效热管理具有指导意义。