Abstract

We study electrical behaviors of a thin piezoelectric semiconductor film under edge stress or interior local stress. The theory of piezoelectricity with coupling to the diffusion-drift theory of semiconductors is used. It is reduced to a two-dimensional theory for the extension of thin piezoelectric semiconductor films. The two-dimensional equations are solved using COMSOL, a numerical analysis software. An n-type MoS₂ monolayer is analyzed in detail. The electric potential and electron concentration distributions under edge stresses are calculated. The effects of the stress amplitude, the doping level of electrons and the in-plane material orientation are examined. The current-voltage relations with three edge electrodes under local stresses are also presented. It is shown that local stresses produce local potential barriers and wells which prohibit or allow currents depending on the stress level.

摘要

我们研究边缘应力或内部局部应力下压电半导体薄膜的电行为。使用了压电理论，并结合了半导体的扩散漂移理论。对于压电半导体薄膜的扩展，它被简化为二维理论。使用数值分析软件COMSOL求解二维方程。n型MoS ₂对单层进行详细分析。计算了边缘应力下的电势和电子浓度分布。研究了应力幅度，电子的掺杂水平和面内材料取向的影响。还介绍了在局部应力下与三个边缘电极的电流-电压关系。结果表明，局部应力会产生局部势垒和势阱，这些势垒和势垒会根据应力水平阻止或允许电流通过。