Abstract

PbZr _x Ti _1-x O₃ (PZT) films were fabricated on FTO substrates by using precursor solutions containing polyvinylpyrrolidone additive and spinning-coating/annealing process. The correlation of the formation, ferroelectric, dielectric and optical reflection features of the layered PZT films with Zr/Ti atomic ration had been studied. It was found that each PZT film was fully crystallized and displayed a polycrystalline phase. The PZT films with Zr content ∼ 0.4–0.6 showed clearly distinguishable layered structures, and exhibited excellent ferroelectric and dielectric properties, together with good optical performance as dielectric mirrors. These PZT films possessed high reflectivity bands, the band widths were all over 50 nm and the peak reflectivities were more than 70%. They also had dielectric constants >550 Fm⁻¹ at 10 KHz, remnant polarizations >24 μC/cm² at 100 V polarizing voltage, rendering their potential application in photonic band gap engineering and integrated optoelectronics.

摘要

PbZr _x Ti _1-x O ₃ 通过使用含有聚乙烯吡咯烷酮添加剂的前体溶液和旋涂/退火工艺，在FTO基板上制备（PZT）薄膜。研究了Zr / Ti原子比的层状PZT薄膜的形成，铁电，介电和光学反射特性之间的相关性。发现每个PZT膜完全结晶并显示出多晶相。Zr含量约为0.4-0.6的PZT膜显示出明显可区分的层状结构，并具有出色的铁电和介电性能，以及作为介电镜的良好光学性能。这些PZT膜具有高反射率带，带宽均超过50nm，并且峰值反射率大于70％。它们的介电常数也> 550 Fm ^-1在10 KHz频率下，在100 V极化电压下的剩余极化> 24μC/ cm ²，使其在光子带隙工程和集成光电中的潜在应用成为可能。