Flexible resistive switching random access memory (RRAM) device is one of the promising candidates for non-volatile memory used in space because of its features such as simple structure, high speed, low power consumption, durability and lightweight with reduction in thickness. Al-In-O/InO_x self-mixing layer can be applied for flexible RRAM due to its low annealing temperature (i.e. temperatures<180 °C), forming-free resistive switching characteristics and low SET and RESET voltage. Herein, effects of the total ionizing dose of ⁶⁰Co-γ ray radiation on the resistive switching, the bending performance of the prepared flexible RRAM devices based on the Al-In-O/InO_x films were studied. The results indicated that the resistance decreases with the bias in high resistance state (HRS) and the SET voltages of the device decrease very slightly after irradiation, while the low resistance state (LRS), RESET voltage, and retention parameters are almost immune to radiation. Moreover, after irradiation, the decrease of resistance with the bias in HRS becomes more exacerbated when bended. Mechanism of bending on the RS is studied by the first-principles calculation, and the mechanism underlying the irradiation effect is studied from the viewpoint of the origin of RS.

柔性电阻切换随机存取存储器（RRAM）器件具有结构简单，速度快，功耗低，耐用性和厚度轻巧等特点，是空间非易失性存储器的有希望的候选者之一。Al-In-O / InO _x自混合层由于其较低的退火温度（即，温度<180°C），无成形的电阻开关特性以及低的SET和RESET电压而可用于柔性RRAM。在此，总电离剂量⁶⁰ Co- γ射线辐射对电阻转换的影响，所制备的基于Al-In-O / InO _x的柔性RRAM器件的弯曲性能电影被研究了。结果表明，电阻随着高电阻状态（HRS）的偏压而降低，并且器件的SET电压在辐照后会非常轻微地降低，而低电阻状态（LRS），RESET电压和保持参数几乎不受辐射的影响。另外，照射后，弯曲时HRS中的偏压引起的电阻的降低更加恶化。通过第一性原理研究了弯曲在RS上的机理，并从RS的起源出发研究了辐照作用的机理。