Abstracts

As the first essential step toward understanding how to obtain an efficient CuInS₂-based solar cell, this paper studied the photoelectric properties of CuInS₂ and sulfide P–N heterojunction. For this purpose, the single-source evaporation method and the chemical bath deposition had been applied to prepare CuInS₂ films and sulfide films (CdS, CdZnS, and CdCuS), respectively. The powder source was obtained from CuInS₂ polycrystalline ingot, which consists of CuInS₂ chalcopyrite phase. The segregated Cu_xS secondary phase on the surfaces of CuInS₂ films could be removed by etching of bromine–methanol (BM) solution. The structures of ternary sulfide films (CdZnS and CdCuS) were similar to that of CdS film. The transient photocurrent of CdZnS thin film was highest, which might be related to the high reaction activity and the good crystal quality. Furthermore, the I–V response of CuInS₂ and CdZnS heterojunction was studied, which was close to the ideal diode type behavior. The low reverse saturation current density, the optimal diode ideality factor, and the high barrier height were obtained from the I–V curve of CuInS₂ and CdZnS heterojunction, which might mean that the CdZnS film could be suitable to use in photovoltaic application.

中文翻译：

---

后处理工艺对CuInS 2及其与各种硫化物（CdS，CdZnS和CdCuS的异质结）的结构，光学和电学性质的影响

摘要

作为了解如何获得高效的基于CuInS ₂的太阳能电池的第一步，本文研究了CuInS ₂和硫化物P–N异质结的光电性能。为此，已采用单源蒸发法和化学浴沉积法分别制备了CuInS ₂膜和硫化物膜（CdS，CdZnS和CdCuS）。从的CuInS得到的粉末源₂多晶铸锭，其由的CuInS的₂黄铜矿相。CuInS ₂表面上的偏析的Cu _x S第二相可以通过蚀刻溴-甲醇（BM）溶液去除薄膜。三元硫化物膜（CdZnS和CdCuS）的结构与CdS膜相似。CdZnS薄膜的瞬时光电流最高，这可能与反应活性高和晶体质量好有关。此外，研究了CuInS ₂和CdZnS异质结的I – V响应，接近理想的二极管类型行为。从CuInS ₂的I – V曲线可以得出低的反向饱和电流密度，最佳的二极管理想因子和高的势垒高度。 和CdZnS异质结，这可能意味着CdZnS薄膜可能适用于光伏应用。