In this work, we investigate the influence of defect concentration of the diamond substrates on the performance of hydrogen-terminated diamond field-effect transistors by Raman spectra, pulsed I–V characteristics analysis, and radio frequency performances measurements. It is found that a sample with higher defect concentration shows larger drain-lag effect and lower large-signal output power density. Defects in the diamond act as traps in the carrier transport and have a considerable influence on the large-signal output power density of diamond field-effect transistors. This work should be helpful for further performance improvement of the microwave power diamond devices.

在这项工作中，我们通过拉曼光谱、脉冲I - V特性分析和射频性能测量来研究金刚石基板的缺陷浓度对氢端接金刚石场效应晶体管性能的影响。发现缺陷浓度较高的样品表现出较大的漏极滞后效应和较低的大信号输出功率密度。金刚石中的缺陷作为载流子传输中的陷阱，对金刚石场效应晶体管的大信号输出功率密度有相当大的影响。这项工作应该有助于进一步提高微波功率金刚石器件的性能。