Photoluminescence (PL) plays an important role in the study of luminescence characteristics of multi-quantum-well (MQW) structures. In this work, we study electro-photoluminescence spectra of InGaAs/AlGaAs MQWs under open-circuit, short-circuit, and forward-voltage conditions. The dependences of photocurrent and photovoltage on excitation power are discussed in this paper, which allows us to explore the carrier behavior in InGaAs/AlGaAs MQW LEDs deeply. We propose that the photovoltaic effect in open-circuit (OC) conditions should be properly considered for PL characterization and calculation of the internal quantum efficiency (IQE) as well as non-radiative recombination (NRA) efficiency in InGaAs/AlGaAs MQW LEDs.

光致发光（PL）在研究多量子阱（MQW）结构的发光特性中起着重要作用。在这项工作中，我们研究了InGaAs / AlGaAs MQW在开路，短路和正向电压条件下的电致发光光谱。本文讨论了光电流和光电压对激励功率的依赖性，这使我们能够深入探索InGaAs / AlGaAs MQW LED中的载流子特性。我们建议应适当考虑开路（OC）条件下的光伏效应，以进行PL表征和InGaAs / AlGaAs MQW LED的内部量子效率（IQE）以及非辐射复合（NRA）效率的计算。