Modification of semiconductor thin films by Swift Heavy Ion (SHI) beam irradiation is a unique technique for property improvement. In the present investigation, Cadmium Zinc Telluride (CZT) thin films of thickness 100 nm are deposited on glass substrates by the thermal evaporation method. These films are irradiated with 100 MeV Ni ion beams at a fluence of 1×10¹² ions/cm² and 5×10¹² ions/cm². The SHIinduced surface modifications are studied by Atomic Force Microscopy (AFM). The structural properties are investigated using X-ray diffraction (XRD) technique. Optical characterization is carried out using UV–Vis spectroscopy. The SHI irradiation on CZT films results in grain fragmentation. Phase transformation and widening of bandgap is also observed after SHI irradiation. The SHIinduced property modifications are explained in the framework of ‘coulomb explosion and thermal spike model’.

通过 Swift 重离子 (SHI) 束辐照对半导体薄膜进行改性是一种独特的性能改进技术。在本研究中，通过热蒸发方法在玻璃基板上沉积厚度为 100 nm 的镉锌碲化物 (CZT) 薄膜。这些薄膜用 100 MeV Ni 离子束以 1×10 ¹²离子/cm ² 和 5×10 ¹²离子/cm ²的通量照射. 通过原子力显微镜 (AFM) 研究 SHI 诱导的表面改性。使用X射线衍射（XRD）技术研究结构特性。使用紫外-可见光谱进行光学表征。CZT 薄膜上的 SHI 辐照导致晶粒破碎。在 SHI 照射后也观察到相变和带隙变宽。在“库仑爆炸和热尖峰模型”的框架中解释了 SHI 引起的属性修改。