Atomically clean and smooth surfaces are critical prerequisites for the epitaxial regrowth of dissimilar semiconductors. Using ZnSe/GaAs as a model system, epitaxial regrowth without a buffer layer after thermal cleaning with various As-fluxes, atomic Ga flux, and atomic hydrogen treatments to the GaAs substrates and the surfaces were investigated via in-situ Auger electron spectroscopy. The ZnSe epilayers grown on the pre-treated GaAs surfaces without a buffer layer were characterized by X-ray diffraction, photoluminescence and atomic force microscopy to evaluate the effectiveness of the surface treatment methods. It was found that a high quality ZnSe layer can be achieved by atomic hydrogen surface treatment at 300 °C without requiring GaAs buffer layer growth, which reveals a path for epitaxy growth avoiding high temperature treatments.

原子清洁和光滑的表面是异种半导体外延再生的关键前提。使用ZnSe / GaAs作为模型系统，通过原位研究了对GaAs衬底和表面进行各种As助熔剂，原子Ga助熔剂和原子氢处理的热清洗后，没有缓冲层的外延生长。俄歇电子能谱。通过X射线衍射，光致发光和原子力显微镜对在没有缓冲层的预处理GaAs表面上生长的ZnSe外延层进行了表征，以评估表面处理方法的有效性。已经发现，可以通过在300°C下进行原子氢表面处理而无需GaAs缓冲层生长来获得高质量的ZnSe层，这揭示了避免高温处理的外延生长路径。