In this communication we consider generalities of the proximity effect in a contact between a conventional $s$-wave superconductor (S) nano-island and a thin film of a topological insulator (TI). A local hybridization coupling mechanism is considered and a corresponding model is corroborated that captures not only the induced unconventional superconductivity in a TI, but also predicts the spreading of topologically protected surface states into the superconducting over-layer. This dual nature of the proximity effect leads specifically to a modified description of topological superconductivity in these systems. Experimentally accessible signatures of this phenomenon are discussed in the context of scanning tunneling microscopy measurements. For this purpose an effective density of states is computed in both the superconductor and topological insulator. As a guiding example, practical applications are made for Nb islands deposited on a surface of Bi${}_2$Se${}_3$. The obtained results are general and can be applied beyond the particular material system used. Possible implications of these results to proximity circuits and hybrid hardware devices for quantum computation processing are discussed.

在这种交流中，我们考虑了常规接触之间的接近效应 $s$波超导体（S）纳米岛和拓扑绝缘体（TI）的薄膜。考虑了局部杂交耦合机制，并证实了相应的模型，该模型不仅捕获了TI中诱导的非常规超导性，而且还预测了拓扑结构受保护的表面态向超导顶层的扩散。邻近效应的这种双重性质具体导致对这些系统中拓扑超导性的修改描述。在扫描隧道显微镜测量的背景下讨论了该现象的实验可访问特征。为此，在超导体和拓扑绝缘体中都计算了有效的状态密度。作为指导示例，实际应用是针对沉积在Bi表面上的Nb岛${}_2$硒${}_3$。获得的结果是一般性的，可以应用到所使用的特定材料系统之外。讨论了这些结果对用于量子计算处理的邻近电路和混合硬件设备的可能含义。