Ion beam induced modification of thin metallic films is an emerging approach to grow metallic nanoparticles controllably. Modification of thin solid films is helpful in fabricating arrays of nanoscale particles for electronic and photonic devices and for the catalyzed synthesis of nanotubes and nanowires. In this work, the modification and nanostructures formation over the surface of SiC/Pd thin films of 15 and 45 nm thicknesses, grown on crystalline Silicon (c-Si) substrate by electron beam deposition, upon ion irradiation, have been investigated by means of scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS), Rutherford backscattering spectrometry (RBS), Fourier Transform Infrared Spectroscopy (FTIR) and Raman spectroscopy. The SiC/Pd bilayer films were irradiated with 100 keV Ar⁺ ions at fluences of 1 × 10¹⁵ and 5 × 10¹⁵ ions/cm² at room temperature. The surface morphology from SEM analysis showed the formation of nanoparticles that were interconnected after irradiation. The RBS and EDS results confirmed the presence of Pd, C, O and Si. While the Raman spectrum of the pristine sample displayed only a sharp peak at 520 cm⁻¹ characteristic to c-Si substrate, the spectra of the irradiated sample red-shifted to lower wavenumbers indicating the appearance of Si nanocrystals.. Hence, ion beam irradiation is a promising method for the fabrication of SiC nanostructures on c-Si substrate.

离子束诱导的金属薄膜的修饰是可控制地生长金属纳米粒子的新兴方法。固体薄膜的改性有助于制造用于电子和光子设备的纳米级颗粒阵列，以及用于纳米管和纳米线的催化合成。在这项工作中，通过离子束辐照，研究了通过电子束沉积在结晶硅（c-Si）衬底上生长的15/45 nm厚度的SiC / Pd薄膜表面上的改性和纳米结构的形成，扫描电子显微镜（SEM），能量色散X射线光谱（EDS），卢瑟福背散射光谱（RBS），傅里叶变换红外光谱（FTIR）和拉曼光谱。用100 keV Ar ⁺辐照SiC / Pd双层薄膜室温下离子通量为1×10 ¹⁵和5×10 ¹⁵ 离子/ cm ²。SEM分析的表面形态表明，辐照后形成了相互连接的纳米颗粒。RBS和EDS结果证实了Pd，C，O和Si的存在。原始样品的拉曼光谱仅在520 cm ^-1处表现出c-Si衬底的特征峰，而被辐照样品的光谱红移到较低的波数，表明出现了Si纳米晶体。因此，离子束辐照是一种在c-Si衬底上制造SiC纳米结构的有前途的方法。