Nowadays, ultraviolet light emitting diodes (UVLEDs) have aroused great interest in past few years for their promising application in adhesive curing, security identification and solid-state lighting etc. In gallium nitride (GaN) based LEDs, the patterned substrates and vertical devices' structure both played pivotal roles in elevating devices' performance. In this work, vertical near-UV-LEDs (405 nm) on different layers of carbon nanotube (CNT) patterns were fabricated by laser lift off (LLO), compared with the conventional lateral counterparts. The LLO threshold energy was reduced by CNTs layers. Although conventional lateral LEDs (LLEDs) exhibited highest external quantum efficiency (EQE) on 2CNTs pattern, the EQE of 3CNTs vertical LEDs (VLEDs) surpassed after LLO. The intrinsic physics mechanism, including: internal quantum efficiency (IQE), light extraction efficiency (LEE), Shockley-Read-Hall (SRH) recombination, radiative recombination and Auger effects, were analyzed by ‘ABC model’, Raman spectrum, X-ray Diffraction (XRD) and temperature dependence photoluminescence (TDPL).

如今，近几年来，紫外线发光二极管（UVLED）在粘合剂固化，安全识别和固态照明等方面的应用前景广阔。在氮化镓（GaN）基LED，图案化基板和垂直器件中，结构在提升设备性能方面都起着关键作用。在这项工作中，与传统的横向对应物相比，通过激光剥离（LLO）在碳纳米管（CNT）图案的不同层上制造了垂直近紫外LED（405 nm）。LLO阈值能量通过CNT层降低。尽管传统的横向LED（LLED）在2CNTs图案上表现出最高的外部量子效率（EQE），但3CNTs垂直LED（VLED）的EQE超过了LLO之后。内在的物理机制，包括：