The structural and operational characteristics of a silicon on insulator (SOI) junctionless (JL) FinFET have been compared with the selective buried oxide (SELBOX) JL FinFET for 15 nm gate length and beyond using simulation studies. Simulations have been performed using silvaco TCAD (Atlas 3-D Module). SELBOX JL FinFET device has shown ~10 times improvement in I_ON/I_OFF ratio with respect to the SOI JL FinFET. The SELBOX based device has subthreshold slope (SS) value of 69.08 mV/Dec whereas this is 84.1 mV/Dec for SOI based device. SELBOX JL FinFET has DIBL value of 31.57 mV/V whereas this is 119 mV/V for SOI JL FinFET. The comparison results, discussed, are for the channel length (gate length) of 15 nm. Furthermore, short-channel characteristics for the n-channel and p-channel SELBOX JL FinFET have been discussed. For channel length of 5 nm (which is a future technology node for mass production of semiconductor devices and systems), SELBOX device has shown favourable value of I_ON/I_OFF ratio as 10⁶ and SS as 96.86 mV/Dec. SELBOX JL FinFET has shown more immunity towards self-heating effect compared to the SOI JL FinFET. Performance of the SELBOX JL FinFET can be enhanced further independently by tuning various parameters such as the buried oxide thickness, the gap between buried oxide layers, substrate doping, and substrate bias.

中文翻译：

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15 nm以下技术节点的SOI和SELBOX无结FinFET的设计与分析

绝缘层上的硅（SOI）无结（JL）FinFET与选择性掩埋氧化物（SELBOX）JL FinFET的结构和工作特性在15 nm的栅极长度上进行了比较，并进行了模拟研究。使用silvaco TCAD（Atlas 3-D模块）进行了仿真。SELBOX JL FinFET器件的I _ON / I _OFF改善了约10倍相对于SOI JL FinFET的比率。基于SELBOX的器件的亚阈值斜率（SS）值为69.08 mV / Dec，而对于基于SOI的器件，该阈值为84.1 mV / Dec。SELBOX JL FinFET的DIBL值为31.57 mV / V，而SOI JL FinFET的DIBL值为119 mV / V。讨论的比较结果是针对15 nm的沟道长度（栅极长度）。此外，已经讨论了用于n沟道和p沟道SELBOX JL FinFET的短沟道特性。对于5 nm的通道长度（这是半导体器件和系统的批量生产的未来技术节点），SELBOX器件的I _ON / I _OFF比的有利值为10 ⁶和SS为96.86 mV / Dec。与SOI JL FinFET相比，SELBOX JL FinFET具有更好的抗自热效应。通过调整各种参数，例如掩埋氧化物厚度，掩埋氧化物层之间的间隙，衬底掺杂和衬底偏置，可以进一步独立地进一步提高SELBOX JL FinFET的性能。