The magnetocaloric effect, electronic, optical and magnetic properties of BaMnS₂ are studied using the Wu-Cohen-Generalized Gradients Approximation (WC-GGA), GGA, Tran and Blaha modified Becke-Johnson potential (TB-mBJ) and GGA+U(U is the Hubbard potential) approximations and Monte Carlo simulations. BaMnS₂ has an antiferromagnetic behavior and a semiconductor character with a narrow band gap follows the trend WC-GGA<GGA<mBJ<GGA+U. The GGA+U transformed and increased the nature of the band gap, causing an apparent change in physical properties. The difference energy calculated between the magnetic configurations confirms that the ground state antiferromagnetic (AFM) is more stable than the paramagnetic (PM) states. The total magnetization, susceptibility, specific heat and magnetic entropy and relative cooling power of this compound are studied. The maximum value of the magnetic entropy was obtained near the paramagnetic AFM- PM transition for (WC-GGA, GGA) and GGA+U equal to 38.31 J.kg⁻¹.K⁻¹ and 16.72 J.kg⁻¹.K⁻¹ respectively.

使用Wu-Cohen广义梯度逼近（WC-GGA），GGA，Tran和Blaha修正的Becke-Johnson势（TB-mBJ）和GGA + U（）研究BaMnS ₂的磁热效应，电，光和磁性能U是Hubbard势）近似和蒙特卡罗模拟。BaMnS ₂具有反铁磁行为，带隙窄的半导体特性遵循WC-GGA <GGA <mBJ <GGA + U的趋势。GGA + U改变并增加了带隙的性质，导致物理性质发生明显变化。在磁性构型之间计算出的能量差确认了基态反铁磁（AFM）比顺磁性（PM）状态更稳定。研究了该化合物的总磁化强度，磁化率，比热和磁熵以及相对冷却功率。所述顺磁性AFM-PM过渡附近获得磁熵的最大值为（WC-GGA，GGA）和GGA + U等于38.31 J.kg ^-1 .K ^-1和16.72 J.kg ^-1 .K ^{- 1个}。