Si/SiGe quantum well (QW) structures show considerable potential in revolutionising Si photonics. This study proposes a novel 1550 nm vertical cavity surface-emitting laser (VCSEL) that is based on Group IV elements and composed of Si/SiO₂ distributed Bragg reflectors and Si/Si_0.13Ge_0.87 QWs. Material composition and QW width in the active region are optimised. The proposed Group IV-based VCSEL can exhibit epitaxial growth on a vertical binary blazed grating coupler and increase coupling efficiency relative to the traditional Group III–V-based VCSEL with an Si waveguide. The proposed VCSEL on Si based on the Group IV element scheme is a cheap, high-yielding and temperature-insensitive on-chip light source that can be used in large-scale, high-density monolithic integration.

Si / SiGe量子阱（QW）结构在革新Si光子学方面显示出巨大潜力。这项研究提出了一种新颖的1550 nm垂直腔表面发射激光器（VCSEL），该激光器基于IV组元素，由Si / SiO ₂分布的布拉格反射器和Si / Si _0.13 Ge _0.87组成QWs。优化了有源区中的材料组成和QW宽度。相对于传统的具有Si波导的基于III-V组的VCSEL，所提议的基于IV组的VCSEL可以在垂直二元闪耀光栅耦合器上表现出外延生长，并提高耦合效率。基于IV组元素方案的基于Si的VCSEL是一种廉价，高产量且对温度不敏感的片上光源，可用于大规模，高密度单片集成。