This paper presents the microfabrication and testing of a membrane-free eight-element single-polarity (n-type) sensing rosette integrated with strained silicon technology over (111) silicon plane to measure the full 3D stress/strain tensor with full temperature compensation. Such n-type piezoresistive (PR) sensor has low sensitivity to the out-of-plane components compared to the in-plane components. To improve the sensitivity of such sensors to the out-of-plane components, a strained silicon technique was integrated into the sensing rosette during the microfabrication process using a highly compressive film produced by plasma enhanced chemical vapor deposition silicon nitride. For experimental verification, a prototype device featuring the proposed sensing rosette was microfabricated using semiconductors fabrication processes. The experimental analysis applied both, in-plane and out-of-plane stresses at different temperatures over a range from −20 С to 60 С. In this work, a smart sensing calibration algorithm, utilizing machine learning, is employed to reduce the temperature impact on both sensitivity and resistance of PR coefficients during stress measurement. The developed sensor is capable of accurately extracting the applied stress/strain components with temperature compensation.

本文介绍了在（111）硅平面上集成了应变硅技术的无膜八元素单极性（n型）传感花环的微细加工和测试，以测量具有完整温度补偿的完整3D应力/应变张量。与平面内组件相比，这种n型压阻（PR）传感器对平面外组件具有低灵敏度。为了提高此类传感器对平面外组件的灵敏度，在微细加工过程中，使用由等离子体增强化学气相沉积氮化硅制成的高压缩膜，将应变硅技术集成到传感花环中。为了进行实验验证，采用半导体制造工艺对具有拟议传感花环的原型设备进行了微制造。实验分析在−20С至60С范围内的不同温度下应用了面内和面外应力。在这项工作中，采用了一种智能感应校准算法，该算法利用机器学习技术来减少温度对应力测量过程中PR系数的灵敏度和电阻的影响。开发的传感器能​​够通过温度补偿准确地提取所施加的应力/应变分量。