Modification of semiconductor thin films by Swift Heavy Ion (SHI) beam irradiation is a unique technique for property improvement. In the present investigation, Cadmium Zinc Telluride (CZT) thin films of thickness 100 nm are deposited on glass substrates by the thermal evaporation method. These films are irradiated with 100 MeV Ni ion beams at a fluence of 1×10¹² ions/cm² and 5×10¹² ions/cm². The SHIinduced surface modifications are studied by Atomic Force Microscopy (AFM). The structural properties are investigated using X-ray diffraction (XRD) technique. Optical characterization is carried out using UV–Vis spectroscopy. The SHI irradiation on CZT films results in grain fragmentation. Phase transformation and widening of bandgap is also observed after SHI irradiation. The SHIinduced property modifications are explained in the framework of ‘coulomb explosion and thermal spike model’.

快速重离子（SHI）束辐照对半导体薄膜的改性是提高性能的独特技术。在本研究中，通过热蒸发法在玻璃基板上沉积了厚度为100 nm的碲化镉锌（CZT）薄膜。用100 MeV Ni离子束以1×10 ¹²离子/ cm ² 和5×10 ¹²离子/ cm ²的通量辐照这些膜。。SHI诱导的表面改性通过原子力显微镜（AFM）研究。使用X射线衍射（XRD）技术研究了结构性能。光学表征使用紫外可见光谱进行。在CZT膜上进行SHI辐照会导致晶粒破碎。SHI辐照后也观察到相变和带隙变宽。SHI诱导的特性修改在“库仑爆炸和热尖峰模型”的框架中进行了解释。