We present two novel barrier-well heterostructure diodes, for use as zero bias detectors in microwave and mm-wave applications. One based on the GaAs platform and one based on In_0.53Ga₀.₄₇As lattice matched to InP. This is achieved by adding quantum wells to Asymmetric Spacer Layer Tunnel (ASPAT) diodes next to the barrier. The DC characteristics of these new diodes were simulated in SILVACO Atlas TCAD software using experimentally validated physical models based upon conventional ASPAT diodes. The highest extracted curvature coefficients of these diodes at zero bias were 33V^-1 and 35V^-1 for GaAs and In_0.53Ga₀.₄₇As based structures respectively. A C-V analysis was performed, and it was found that the addition of quantum wells reduced the zero-bias capacitance of these devices when compared with the standard ASPAT diode. The new diodes exhibited estimated cut-off frequencies of 532GHz and 800GHz for the GaAs and In_0.53Ga₀.₄₇As based structures respectively. The lower cut off frequencies for the In_0.18Ga_0.82As/AlAs/ GaAs devices is largely due to their inherently higher series resistance.

我们介绍了两种新颖的势垒阱异质结构二极管，它们在微波和毫米波应用中用作零偏压检测器。一种基于GaAs平台，另一种基于In _0.53 Ga ₀。₄₇与InP匹配的晶格。这是通过添加量子阱到达到作为ymmetric SP宏基层Ť unnel（ASPAT）二极管旁边的障碍。这些新二极管的直流特性在SILVACO Atlas TCAD软件中使用基于常规ASPAT二极管的经过实验验证的物理模型进行了仿真。对于GaAs和In _0.53，这些二极管在零偏压下的最高提取曲率系数分别为33V ^-1和35V ^-1Ga ₀。₄₇分别为基于结构的结构。进行了CV分析，发现与标准ASPAT二极管相比，添加量子阱降低了这些器件的零偏置电容。对于GaAs和In _0.53 Ga ₀，新二极管的截止频率估计为532GHz和800GHz 。₄₇分别为基于结构的结构。In _0.18 Ga _0.82 As / AlAs / GaAs器件的截止频率较低，主要是由于其固有的较高串联电阻。