The degradation of a pinned photodiode (PPD) 8T CMOS image sensor (8T-CIS) due to total ionizing dose (TID) and displacement damage dose (DDD) have been investigated with γ-ray and proton irradiation. The dark current and its distributions were studied. We observed a significant increase in the dark current after the proton irradiation than that after the γ-ray irradiation. We observed that the peak values in the Gaussian distribution shift to higher values as a result of TID effects while comparing the dark current distribution results of the γ-ray and proton irradiation. In contrast, the hot pixel tailing increases with the DDD effect. At the same time, the degradation of the light response of the device was investigated by observing the quantum efficiency in the wavelength range of 420–800 nm. A comparison of the results obtained from the γ-ray and proton irradiations showed that the short-wavelength degradation was caused by the TID whereas the DDD caused the degradation in the full spectral range.

已通过γ射线和质子辐照研究了由于总电离剂量（TID）和位移损伤剂量（DDD）而导致的固定光电二极管（PPD）8T CMOS图像传感器（8T-CIS）的退化。研究了暗电流及其分布。我们观察到质子辐照后的暗电流比γ射线辐照后的暗电流显着增加。我们观察到，由于TID效应，高斯分布中的峰值移至更高的值，同时比较了γ射线和质子辐照的暗电流分布结果。相反，热像素拖尾随DDD效应而增加。同时，通过观察420-800 nm波长范围内的量子效率，研究了器件光响应的下降。