Based on multi-cell structure model, the ruggedness of Dual Gate Commutated Thyristor (Dual GCT) against dynamic avalanche and surge current is examined by the device simulation. The simulation results of turn-off behavior show at smaller turn-off delay time, the current filament caused by dynamic avalanche arises in the GCT-A part, which is adverse for the device, and at larger turn-off delay time, the filament arises in the GCT-B part. And the carrier lifetime in the GCT-B part can also influence where the filament appears. Increasing the carrier lifetime of GCT-B part could improve the surge ruggedness of the device, but a compromise must be made between the turn-off and the surge ruggedness. Choosing the lifetime control process that can maximize the temperature dependency coefficient of the lifetime is proved to be an effective method to improve the surge ruggedness while ensuring the turn-off behavior well. Finally, a new Dual GCT structure with proper layout of anode short regions in the GCT-B part is proposed and it is validated by simulation to have excellent surge ruggedness.

基于多单元结构模型，通过器件仿真研究了双栅极换向晶闸管（Dual GCT）对动态雪崩和浪涌电流的耐受性。关断行为的仿真结果表明，在较小的关断延迟时间下，由动态雪崩引起的电流灯丝会出现在GCT-A部分，这对器件不利；在关断延迟时间较长的情况下，灯丝出现在GCT-B部分。GCT-B部分中的载流子寿命也会影响灯丝的出现位置。增加GCT-B部件的载流子寿命可以改善器件的浪涌耐受性，但是必须在关断和浪涌耐受性之间做出折衷。事实证明，选择一种可以使寿命的温度相关系数最大的寿命控制方法是一种在确保良好的关断性能的同时提高电涌强度的有效方法。最后，提出了一种新的双重GCT结构，该结构具有适当的GCT-B部分中的阳极短区布局，并通过仿真验证了其具有出色的浪涌强度。