Temperature-dependent luminescent properties of dual-wavelength blue-cyan light emitting diodes (LEDs) based on InGaN quantum wells were investigated by means of photo- (PL) and electroluminescence (EL) spectroscopy techniques. The results showed that the thickness of the interwell GaN layer had a great impact on the spectra (especially on the EL ones) at room temperature. At low temperatures, however, the EL spectra are nearly identical for all the samples regardless the differences at room temperature. The differences in the temperature behavior of the above-bandgap PL spectra can be explained in terms of different areas of carrier collection region for the samples with different interwell barrier thickness, as evidenced by the below-bandgap PL spectra measurements as well as by the Beer's law calculations. Additionally, an anomalous increase of the above-bandgap PL intensity is observed at the temperature range of ~120–150 K, which is absent in the case of below-bandgap excitation.

借助光（PL）和电致发光（EL）光谱技术，研究了基于InGaN量子阱的双波长蓝青色发光二极管（LED）的温度相关发光特性。结果表明，在室温下，阱间GaN层的厚度对光谱（特别是EL光谱）有很大的影响。但是，在低温下，所有样品的EL光谱几乎都相同，而与室温下的差异无关。带隙PL谱测量和比尔谱表明，带隙PL谱温度行为的差异可以用具有不同阱间势垒厚度的样品的载流子收集区域的不同区域来解释。法则计算。此外，