Heat mitigation is a major challenge in 3-D IC (Three-Dimensional Integrated Circuit) realization. A study of analytical thermal behavior of the TSV (Through Silicon Via) is very important. Simple and compact yet other models were found deficient to solve this problem in the literature survey. In this paper, resistance networks are used to model the heat transfer of the TSVs in both vertical and horizontal directions in simpler and compact models. The accuracy of such models is compared to those from the commercially available CFD (computational fluid dynamics) tool. The errors of corrections between the tool and developed models are corrected by multiplication factors, resulting in 4.18% accuracy. Varying the thicknesses of a liner, filler, soldering, and substrate materials is studied concerning heat transfer and physical behavior of three planar TSV stacked systems. The major purpose is to incorporate both vertical and horizontal thermal resistance networks captured more accurately in heat dissipation paths. Proposed models of TSVs can be used in the active interposer simulations or the face-to-face fabrication stacked methods of the 3-D IC structures.

散热是实现3D IC（三维集成电路）的主要挑战。对TSV（硅通孔）的分析热行为的研究非常重要。在文献调查中，发现简单而紧凑的其他模型不足以解决此问题。在本文中，电阻网络用于在更简单和紧凑的模型中对TSV在垂直和水平方向的传热建模。将此类模型的准确性与可商购CFD（计算流体力学）工具中的模型进行比较。工具和已开发模型之间的校正误差通过乘数因子进行校正，从而获得4.18％的精度。改变衬里，填料，焊接的厚度，研究了三种平面TSV堆叠系统的传热和物理行为方面的基板材料。主要目的是将在散热路径中捕获的垂直和水平热阻网络合并在一起。TSV的建议模型可用于有源中介层仿真或3-D IC结构的面对面制造堆叠方法中。